2014. 10. 31 1/6 semiconductor technical data kf10n68f n channel mos field effect transistor revision no : 2 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for active power factor correction and switching mode power supplies. features h v dss =680v, i d =10a h drain-source on resistance : r ds(on) (max)=0.95 ? @v gs =10v h qg(typ.)= 24nc maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 680 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 10* a @t c =100 ? 6* pulsed (note1) i dp 25* single pulsed avalanche energy (note 2) e as 360 mj repetitive avalanche energy (note 1) e ar 16.5 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 46 w derate above 25 ? 0.37 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 2.7 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w g d s pin connection 1. gate 2. drain 3. source to-220is (1) a a b b c c d d e e f f g g h h 1.47 max 1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters *single gauge lead frame 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _
2014. 10. 31 2/6 kf10n68f revision no : 2 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l =6.8mh, i s =10a, v dd =50v, r g =25 ? , starting t j =25 ? . note 3) i s ? 10a, di/dt ? 100a/ k , v dd ? bv dss , starting t j =25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. 2 product name lot no 1 813 2 kf10n68 f 1 marking characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 680 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.65 - v/ ? drain cut-off current i dss v ds =680v, v gs =0v - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =5a - 0.76 0.95 ? dynamic total gate charge q g v ds =520v, i d =10a v gs =10v (note4,5) - 24 - nc gate-source charge q gs - 6 - gate-drain charge q gd - 8 - turn-on delay time t d(on) v dd =325v i d =10a r g =25 ? (note4,5) - 32 - ns turn-on rise time t r - 35 - turn-off delay time t d(off) - 88 - turn-off fall time t f - 30 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1350 - pf output capacitance c oss - 140 - reverse transfer capacitance c rss - 13 - source-drain diode ratings continuous source current i s v gs 2014. 10. 31 3/6 kf10n68f revision no : 2 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.4 0.8 1.0 1.2 0.6 1.4 1.8 reverse drain current i s (a) 3.0 2.5 1.0 1.5 0.5 0 2.0 08 4 26 16 12 10 14 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 5a v gs = 0v i ds = 250 100 c 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v v gs =7v v gs =10v v gs =6v v ds =30v v gs =5v 100 c 25 c
2014. 10. 31 4/6 kf10n68f revision no : 2 gate - charge q g (nc) 0 12 10 6 2 4 8 28 32 12 4 20 16 24 8 0 fig8. q g - v gs gate - source voltage v gs (v) 10 1 10 2 10 3 10 4 i d =10a v ds = 520v fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 010203040 c rss c oss c iss fig9. safe operation area drain current i d (a) drain - source voltage v ds (v) 10 2 10 1 10 -1 10 1 10 0 10 0 10 -2 10 2 10 3 time ( sec ) fig10. transient thermal response curve transient thermal resistance 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 operation in this area is limited by r ds(on) 100 s 10 s 1ms 10ms dc 10 -2 10 -1 10 1 10 0 dut y=0.5 0.05 0.02 0.2 0.01 0.1 singl e p uls e t 1 t 2 p dm - duty factor, d= t 1 /t 2 - rth(j-c) = 2.7 c/w max
2014. 10. 31 5/6 kf10n68f revision no : 2 fig11. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig13. resistive load switching fig12. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2014. 10. 31 6/6 kf10n68f revision no : 2 fig14. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss
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